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By applying an electric field in a magnetic memory storage material
Japanese scientists have discovered that by applying an electric field to a magnetic memory storage material, it is possible to reduce the magnetic field that needs to be applied when writing data. This discovery may be applied to the manufacture of ultra-high-density memory. The
With the gradual miniaturization of computers and related peripheral products, the study of magnetic materials for memory storage is also moving toward high density. However, due to the increase in density, the magnetic field required to store data bits per unit volume/area also increases. Magnetic material plant Because of the technical difficulties in the generation of high magnetic fields, the application of high-density magnetic materials is facing limitations and bottlenecks. In this issue of ScienceExpress, Daichi Chiba of Tohoku Laboratories, Tohoku University in Japan, published research results that can reduce the amount of magnetic field required to access data by applying an electric field.
Daichi et al.'s experiments first applied a thin layer of insulator and metal electrode to indium arsenide (InAs) containing ferromagnetic manganese (Mn) metal, and then applied an electric field to indium arsenide through the electrode. They found that when an electric field of 1.5 MV/cm is applied, the magnitude of the magnetic field required to change the polarity of the magnetic moment (to perform data writing) is one-fifth of that when no electric field is applied. This discovery led to a glimmer of hope for the study of high-density magnetic materials. However, the project host Hideo Ohno said that because their experiments were conducted at a low temperature of 30 Kelvin, their findings could only be considered as preliminary proof of the feasibility of applying an electric field. If you want to talk about practical applications, it can be verified by experiments conducted at room temperature.
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