Industry new
Indium arsenide (InAs) with ferromagnetic material
With the gradual miniaturization of computers and related peripheral products, research on magnetic material materials for memory storage is gradually moving toward high density. However, due to the increase in density, the magnetic field required to store data bits per unit volume/area also increases. Because of the technical difficulties in the generation of high magnetic fields, the application of high-density magnetic material materials faces limitations and bottlenecks.
Recently, Daichi Chiba of Tohoku Laboratories, Tohoku University in Japan, published the results of a research on the use of an applied electric field magnetic material plant to reduce the amount of magnetic field required to access data. This study found that ferrite manufacturers, by applying an electric field to a magnetic material's memory storage material, can reduce the magnetic field required to write data, and may be applied to the manufacture of ultra-high-density memory.
Daichi et al. first experimented on indium arsenide (InAs) with a ferromagnetic material containing manganese (Mn) metal. The ferrite cubes were plated with a thin layer of insulator and metal electrode, and then passed through the electrode pair. Indium applies an electric field. When a 1.5 MV/cm electric field is applied, the magnitude of the magnetic field required to change the polarity of the magnetic moment (for data writing) is one-fifth of that when no electric field is applied. This discovery led to a glimmer of hope for the study of high-density magnetic material materials. Cutting magnets However, the project host Hideo Ohno said that because their experiment was conducted at a low temperature of 30K absolute temperature, its discovery can only be regarded as preliminary proof of the feasibility of applying an electric field. If you want to talk about practical applications, cutting cubes can also be verified by experiments conducted at room temperature.
∷
KUNAG
KUNAG
KUNAGE