Industry new
Magnetic Rotor Transfer Torque Effect Technology
Currently, magnetic memory is based on a technology called the "spin-transfer torque" (STT) effect. In addition to the electronic charge, it also utilizes the magnetic or spin characteristics that they possess. STT technology uses current moving electronics to write data into memory. However, although STT technology is superior to other memory technologies in many aspects, its current-based write mechanism still requires a certain amount of power, which means that it generates heat when writing data. In addition, its storage capacity depends on the physical space occupied by each bit of data, and this process is limited by the current intensity required for information writing. As a result, lower bit capacity translates into relatively high unit data storage costs, which limits the application of STT technology.
UCLA's research team used the MaRAM to teach the magnetic material of the magnet to replace the current in the STT technology with voltage and write the data to memory. This eliminates the necessity of moving a large number of electrons through the wire, but uses a voltage, that is, a potential difference, to perform the conversion of magnetic digits, thereby writing information into the memory. This greatly reduces the amount of heat generated by computer memory and increases energy efficiency by 10 to 1000 times. In addition, the storage density of the memory can also be increased by a factor of 4, that is, more data can be stored in the same physical area, thereby reducing the storage cost of the unit data.
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