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Magnetic material can develop high-efficiency memory

By using voltages instead of flowing currents, researchers at the University of California, Los Angeles (UCLA) Henri Samueli School of Engineering and Applied Science are superfast and high on a class of magnetoresistive random access memory (MRAM). Capacity computer memory has undergone major improvements.
The UCLA team called the memory they modified as Magnetoelectronic Random Access Memory (M eRAM). It is very likely to be used to make future memory chips that can be used in almost all electronic applications, including smartphones, tablets, computers, and microprocessors, as well as data storage such as computers and computers. Solid state hard disk used in large data centers.
Compared with the prior art, the key advantage of the MeRAM memory is that it combines ultra-low energy with extremely high storage density, high read/write time, and non-volatile. Non-volatile refers to the ability of the memory to retain data in the event of a power failure. M eRAM memory is similar to hard disk drives and flash memory sticks, but it is much faster.
Currently, magnetic memory is based on a technology called the "spinning torque transfer" (STT) effect, which utilizes the magnetic or spin characteristics that they possess, in addition to the electronic charge. STT technology uses current moving electronics to write data into memory. However, although STT technology is superior to other memory technologies in many aspects, its current-based write mechanism still requires a certain amount of power, which means that it generates heat when writing data. In addition, its storage capacity depends on the physical space occupied by each bit of data, and this process is limited by the current intensity required for information writing. As a result, lower bit capacity translates into relatively high unit data storage costs, which limits the application of STT technology.
UCLA's research team used MeRAM to replace the current in the STT technology with voltage and write the data to memory. This eliminates the necessity of moving a large number of electrons through the wire, but uses a voltage, that is, a potential difference, to perform the conversion of magnetic digits, thereby writing information into the memory. This greatly reduces the amount of heat generated by computer memory and increases energy efficiency by 10 to 1000 times. In addition, the storage density of the memory can also be increased by a factor of 4, that is, more data can be stored in the same physical area, thereby reducing the storage cost of the unit data.

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